最大源漏极电压Vds
Drain-Source Voltage | -12V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -12V |
最大漏极电流Id
Drain Current | -2.7A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance | 160mΩ@ VGS = -1.8V, ID = -1A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.45V |
耗散功率Pd
Power Dissipation | 1W |
| Description & Applications | P-Channel 12-V (D-S) MOSFET FEATURES Thermally Enhanced SC-70 Package ESD Protected: 3000 V APPLICATIONS Load Switching PA Switch Level Switch |
| 描述与应用 | P沟道12-V（D-S）的MOSFET 特点 耐热增强型SC-70封装 ESD保护：3000 V 应用 负载开关 PA开关 液位开关 |