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Parameters:

  • Model:SI3865BDV
  • Manufacturer:HUABAN
  • Date Code:06+nopb
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:1AY
  • Package:SOT-163

类型
Type
高端开关 high-side
输出数
Number of Outputs
1
Rds (On)60mΩ
内部开关
Internal Switch(s)
有 YES
电流限制
Current Limit
2.9A
电压 - 输入
Voltage - Input
1.8V~8V
Description & ApplicationsLoad Switch with Level-Shift • 80-mr Low rDS(on) TrenchFET • 1.8 to 8-V Input • 1.5 to 8-V Logic Level Control • Low Profile, Small Footprint TSOP-6 Package • 3000-V ESD Protection On Input Switch, VON/OFF • Adjustable Slew-Rate The Si3865DV includes a p- and n-channel MOSFET in a single TSOP- package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as alevel-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si3865DV operates on supply lines from 1.8 to 8-V, and can drive loads up to 2.7 A.
描述与应用负荷开关电平转换 •80-MR低RDS(ON)的TrenchFET? •1.8到8 V输入 •1.5到8-V逻辑电平控制 •薄型,占地面积小TSOP-6封装 •3000 V ESD保护输入开关,VON/ OFF •可调摆率 SI3865DV包括TSOP封装在一个单一的一个p-和n-沟道MOSFET。低导通电阻的P通道的TrenchFET?是专为使用作为负载开关。 n-沟道,外部电阻器,可用于作为的alevel移位驱动的p-沟道负载开关。 n-沟道MOSFET具有内部的ESD保护和低至1.5-V可以由逻辑信号。 SI3865DV操作从1.8到8-V的供应线,并且可以驱动负载可达2.7 A。

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SI3865BDV
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