| 最大源漏极电压Vds Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
±20V |
| 最大漏极电流Id Drain Current |
7A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
16mΩ~21mΩ |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
1.3V~2.5V VDS = 10 V, ID = 1mA |
| 耗散功率Pd Power Dissipation |
2.5W |
| Description & Applications |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS Ⅳ) . * Notebook PC Applications * Portable Equipment Applications * Small footprint due to a small and thin package * Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) * Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) * Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) |
| 描述与应用 |
东芝场效应晶体管的硅N沟道MOS型（U-MOSⅣ）。 *笔记本电脑应用 *便携式设备的应用 *由于占地面积小，小而薄的封装 *低漏源导通电阻RDS（ON）= 16mΩ（典型值） *低漏电流IDSS= 10μA（最大）（VDS=30 V） *增强模式：VTH =1.3到2.5 V（VDS=10V，ID=1毫安） |