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2SA1179 PNP transistors(BJT) -55V -150mA/-0.15A 180MHz 200~400 -150mV/-0.15V SOT-23/CP marking M6
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-55V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
−50V |
集电极连续输出电流IC Collector Current(IC) |
−150mA/-0.15A |
截止频率fT Transtion Frequency(fT) |
180MHz |
直流电流增益hFE DC Current Gain(hFE) |
200~400 |
管压降VCE(sat) Collector-Emitter SaturationVoltage |
−150mV/-0.15V |
耗散功率Pc PoWer Dissipation |
200mW/0.2W |
Description & Applications | |
描述与应用 |