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2SA1235A PNP transistors（BJT） -60V -200mA/-0.2A 180MHz 150~300 -300mV/-0.3V SOT-23/SC-59 marking ME
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
−50V |
| 集电极连续输出电流IC Collector Current(IC) |
−200mA/-0.2A |
| 截止频率fT Transtion Frequency(fT) |
180MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
150~300 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage |
-300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation |
200mW/0.2W |
| Description & Applications | Plastic-Encapsulated Transistors FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ |
| 描述与应用 | 塑料封装晶体管 特点 功耗 PCM：0.2 W（T环境温度= 25℃） 集电极电流 ICM：-0.2à 集电极 - 基极电压 V（BR）CBO：-60 V 操作和存储结温范围 TJ，TSTG：-55℃至+150℃ |
