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2SA1330 PNP transistors(BJT) -200V -100mA/-0.1A 120MHz 200~450 -210mV/-0.21V SOT-23/SC-59 marking 07 high voltageamplifier/switch
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-200V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-200V |
集电极连续输出电流IC Collector Current(IC) |
−100mA/-0.1A |
截止频率fT Transtion Frequency(fT) |
120MHz |
直流电流增益hFE DC Current Gain(hFE) |
200~450 |
管压降VCE(sat) Collector-Emitter SaturationVoltage |
-210mV/-0.21V |
耗散功率Pc PoWer Dissipation |
200mW/0.2W |
Description & Applications | High voltage amplifier and switching PNP silicon epitaxial transistor mini mold high DC current gain; high voltage ; complementary to 2sc3360 |
描述与应用 | 高电压放大器和开关 PNP硅外延晶体管 小型模具 高直流增益; 高电压; 互补2SC3360 |