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2SA1364 PNP transistors(BJT) -60V -1A 85MHz 150~300 -110mV/-0.11V SOT-89/SC-62 marking CE
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −60V |
集电极连续输出电流IC Collector Current(IC) | -1A |
截止频率fT Transtion Frequency(fT) | 85MHz |
直流电流增益hFE DC Current Gain(hFE) | 150~300 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | -110mV/-0.11V |
耗散功率Pc PoWer Dissipation | 500mW/0.5W |
Description & Applications | high collector current; high gain band width product; excellent linearity of DC forward current gain; low collector to emitter saturation voltage |
描述与应用 | 高集电极电流; 高增益带宽产品; 卓越的线性度直流正向电流增益; 集电极到发射极饱和电压低 |