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2SA1415S PNP transistors(BJT) -180V -140mA/-0.14A 150MHz 140~280 -140mV/-0.14V SOT-89/PCP marking AA driver
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-180V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-160V |
集电极连续输出电流IC Collector Current(IC) |
-140mA/-0.14A |
截止频率fT Transtion Frequency(fT) |
150MHz |
直流电流增益hFE DC Current Gain(hFE) |
100~400 |
管压降VCE(sat) Collector-Emitter SaturationVoltage |
-140mV/-0.14V |
耗散功率Pc PoWer Dissipation |
500mW/0.5W |
Description & Applications | PNP/NPN epitaxial planar silicon transistors High-voltage switching Predriver applications adoption of FBET process; high breakdown voltage ; excellent linearity of hFE and small Cob; fast switching speed |
描述与应用 | PNP/ NPN外延平面硅晶体管 高压开关 预驱动器应用 采纳的FBET过程; 击穿电压高; 卓越的HFE线性度; 开关速度快 |