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2SA1577 PNP transistors(BJT) -40V -500mA/-0.5A 200MHz 82~180 -600mV/-0.6V SOT-323/UMT3 marking HP
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
−40V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
−32V |
集电极连续输出电流IC Collector Current(IC) |
−500mA/-0.5A |
截止频率fT Transtion Frequency(fT) |
200MHz |
直流电流增益hFE DC Current Gain(hFE) |
82~180 |
管压降VCE(sat) Collector-Emitter SaturationVoltage |
−600mV/-0.6V |
耗散功率Pc PoWer Dissipation |
200mW/0.2W |
Description & Applications | Medium Power Transistor Features 1) Large IC. ICMAX.= -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC4097 |
描述与应用 | 中等功率晶体管 特点 1)大输出电流。 ICMAX=500毫安 2)低VCE(sat)的。 为低电压操作的理想选择。 3)补充2SC4097 |