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2SA1579 PNP transistors（BJT） -120V -50mA 140MHz 180~560 -500mV/-0.5V SOT-323/UMT3 marking RS high voltageamplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -120V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -120V |
| 集电极连续输出电流IC Collector Current(IC) | -50mA |
| 截止频率fT Transtion Frequency(fT) | 140MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 180~560 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | high-voltage amplifier transistor Features 1) High breakdown voltage. (BVCEO = −120V) 2) Complements the 2SC4102 / 2SC3906K |
| 描述与应用 | 高电压放大器晶体管 特点 1）高的击穿电压。 （BVCEO=120V） 2）补充2SC4102/2SC3906K |
