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2SA1732S PNP transistors（BJT） -50V -8A 250MHz 140~280 -300mV/-0.3V TO-252/DPAK marking A1732 highspeed switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流IC Collector Current(IC) | -8A |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 140~280 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 1W |
| Description & Applications | High-Speed Switching Applications Features · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching. |
| 描述与应用 | 高速开关应用 特点 ·采用FBET，MBIT过程。 ·大电流容量。 ·低集电极 - 发射极饱和电压。 ·高速开关 |
