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2SA1740E PNP transistors(BJT) -400V -200mA/-0.2A 70MHz 100~200 -800mV/-0.8V SOT-89/PCP marking AKE high voltage driver
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -400V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -400V |
集电极连续输出电流IC Collector Current(IC) | −200mA/-0.2A |
截止频率fT Transtion Frequency(fT) | 70MHz |
直流电流增益hFE DC Current Gain(hFE) | 100~200 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −800mV/-0.8V |
耗散功率Pc PoWer Dissipation | 1.3W |
Description & Applications | PNP Epitaxial planar silicon transistor NPN triple diffused planar silicon transistor High-Voltage Driver Applications high breakdown voltage; adoption of MBIT process; excellent hFE linearity |
描述与应用 | PNP外延平面硅晶体管 NPN三重扩散平面硅晶体管 高电压驱动器应用 击穿电压高; 通过MBIT过程的; 出色的放大线性度 |