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2SA1832F-GR PNP transistors(BJT) -50V -150mA/-0.15A 80MHz 200~400 -100mV/-0.1V SOT-523/ESM marking SG high HFE

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
−150mA/-0.15A
截止频率fT
Transtion Frequency(fT)
80MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-100mV/-0.1V
耗散功率Pc
PoWer Dissipation
100mW/0.1W
Description & Applicationssilicon PNP epitaxial type • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • Complementary to 2SC4738F
描述与应用硅PNP外延型 •高电压:VCEO=-50 V •高电流:IC= -150 mA(最大) •高HFE:HFE=120〜400 •优秀的HFE线性   HFE(IC= -0.1毫安)/ HFE(IC=-2毫安)= 0.95(平均值) •互补2SC4738F
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