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2SA1832FT-GR PNP transistors（BJT） -50V -150mA/-0.15A 80MHz 200~400 -100mV/-0.1V SOT-623/TESM marking SG high HFE
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | −150mA/-0.15A |
| 截止频率fT Transtion Frequency(fT) | 80MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -100mV/-0.1V |
| 耗散功率Pc PoWer Dissipation | 100mW/0.1W |
| Description & Applications | silicon PNP epitaxial type • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • Complementary to 2SC4738F |
| 描述与应用 | 硅PNP外延型 •高电压：VCEO=-50 V •高电流：IC= -150 mA（最大） •高HFE：HFE=120〜400 •优秀的HFE线性 HFE（IC= -0.1毫安）/ HFE（IC=-2毫安）= 0.95（平均值） •互补2SC4738F |
