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2SA1836 PNP transistors（BJT） -60V -100mA/-0.1A 180MHz 200~400 -180mV/-0.18V SOT-523/SC-75 marking M6
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
| 截止频率fT Transtion Frequency(fT) | 180MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -180mV/-0.18V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP SILICON EPITAXIAL TRANSISTOR FEATURES • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = −50 V • Can be automatically mounted |
| 描述与应用 | PNP硅外延晶体管 特点 •高直流电流增益：HFE2=200 TYP。 •高电压：VCEO=-50 V •可自动安装 |
