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2SA2018 PNP transistors（BJT） -15V -500mA/-0.5A 260MHz 270~680 -250mV/-0.25V SOT-523/EMT3 marking BW
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -15V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | 260MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 270~680 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率Pc PoWer Dissipation | 150mW/0.15W |
| Description & Applications | PNP Silicon epitaxial Transistor Low frequency transistor Applications For switching, for muting. Features collector current is large. Collector saturation voltage is low. |
| 描述与应用 | PNP硅外延晶体管 低频晶体管 应用 对于开关，静音。 特点 集电极电流大。 集电极饱和电压低。 |
