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2SB1260 PNP transistors(BJT) -80V -1A 100MHz 82~180 -400mV/-0.4V SOT-89/MPT marking BEP high breakdown voltage

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−80V
集电极连续输出电流IC
Collector Current(IC)
-1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
82~180
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-400mV/-0.4V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsPNP Silicon epitaxial planar transistor Power Transistor Features 1) High breakdown voltage and high current. 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements to 2SD1898.
描述与应用PNP硅外延平面晶体管 功率晶体管 特点 1)高击穿电压和高电流。 2)良好的HFE线性。 3)低VCE(sat)的。 4)补充型2SD1898。
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