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2SB1561-Q PNP transistors（BJT） -60V -2A 200MHz 120~270 -350mV/-0.35V SOT-89/MPT marking BLQ
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流IC Collector Current(IC) | -2A |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 120~270 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −550mV/-0.55V |
| 耗散功率Pc PoWer Dissipation | 500mW/0.5W |
| Description & Applications | Medium Power Transistor Features Low saturation voltage Complements to2SD2391. |
| 描述与应用 | 中等功率晶体管 特点 低饱和电压 补充型to2SD2391。 |
