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2SB1572 PNP transistors（BJT） -60V -3A 160MHz 160~320 -600mV/-0.6V SOT-89/SC-62 marking HY
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
−60V |
| 集电极连续输出电流IC Collector Current(IC) |
-3A |
| 截止频率fT Transtion Frequency(fT) |
160MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
160~320 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage |
−600mV/-0.6V |
| 耗散功率Pc PoWer Dissipation |
2W |
| Description & Applications | PNP Silicon epitaxial planar transistor Features Low VCE(sat) Complementary to 2SD2403 |
| 描述与应用 | PNP硅外延平面晶体管 特点 低VCE（饱和） 补充型2SD2403 |
