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2SB1614 PNP transistors（BJT） -20V -2A 60MHz 200~800 -250mV/-0.25V SOT-89/SC-62 marking 2K low-frequency amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流IC Collector Current(IC) | -2A |
| 截止频率fT Transtion Frequency(fT) | 60MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~800 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率Pc PoWer Dissipation | 1W |
| Description & Applications | PNP Silicon epitaxial planar transistor For low-frequency amplification Features Large collector power dissipation PC Low collector to emitter saturation voltage VCE(sat) Mini Power type package |
| 描述与应用 | PNP硅外延平面晶体管 对于低频放大 特点 大收藏家功耗PC 低集电极到发射极饱和电压VCE（SAT） 迷你功率型封装 |
