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2SB800 PNP transistors（BJT） -80V -300mA/-0.3A 100MHz 135~270 -300mV/-0.3V SOT-89/SC-62 marking FL high collector emitter voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −80V |
| 集电极连续输出电流IC Collector Current(IC) | −300mA/-0.3A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 135~270 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 2W |
| Description & Applications | PNP silicon epitaxial transistor power mini mold high collector to emitter saturation voltage； complementary to 2SD1001 |
| 描述与应用 | PNP硅外延晶体管 电源小型模具 高集电极到发射极饱和电压; 2SD1001互补 |
