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2SC2059K NPN Transistors(BJT) 25V 20mA 500MHz 82~180 100mV/0.1V SOT-23/SC-59/SMT3 marking JP RF amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
25V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
20V
集电极连续输出电流IC
Collector Current(IC)
20mA
截止频率fT
Transtion Frequency(fT)
500MHz
直流电流增益hFE
DC Current Gain(hFE)
82~180
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsNPN Silicon epitaxial Transistors RF amplifier Features High transition frequency. Low output capacitance. Low base resistance for high gain and excellent noise response.
描述与应用NPN硅外延晶体管 RF放大器 特点 高转换频率。 低输出电容。 基数低电阻,高增益和优良的噪声响应
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