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2SC3082K NPN Transistors(BJT) 40V 50mA 1.1GHz 56~120 100mV/0.1V SOT-23/SC-59/SMT3 marking SN RF amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
19V
集电极连续输出电流IC
Collector Current(IC)
50mA
截止频率fT
Transtion Frequency(fT)
1.1GHz
直流电流增益hFE
DC Current Gain(hFE)
56~120
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & Applications NPN Silicon epitaxial planer type RF amplifier Features Low noise figure High transister frequency Low collector to base time constant and high gain Excellent noise response
描述与应用 NPN硅外延平面型 RF放大器 特点 低噪声系数 高型晶体管频率 基本时间常数和高增益低集电极 出色的噪声响应
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