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2SC3647T-TD-E NPN Transistors(BJT) 120V 2A 120MHz 200~400 400mV/0.4V SOT-89/PCP marking CCT high voltage switch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
120V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
100V
集电极连续输出电流IC
Collector Current(IC)
2A
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
400mV/0.4V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & ApplicationsNPN epitaxial planar Silicon Transistors High-Voltage Switching applications High breakdown voltage and large current capacity Fast switching time Very small size making it easy to provide high-density. Complementary to 2SA1417
描述与应用NPN外延平面硅晶体管 高电压开关应用 高击穿电压和大电流的能力 快速开关时间 非常小的尺寸使其易于提供高密度。 互补型2SA1417
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