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2SC4207-GR NPN Transistors(BJT) 60V 150mA/0.15A 80MHz 200~400 100mV/0.1V SOT-153/SMV marking LG radio general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 150mA/0.15A |
| 截止频率fT Transtion Frequency(fT) | 80MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率Pc Power Dissipation | 300mW/0.3W |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Small package High voltage and high current High hFE Excellent hFE linearity Complementary to 2SA1618 |
| 描述与应用 | 东芝晶体管的硅NPN外延式（PCT的进程） 音频通用放大器应用 小型封装 高电压和高电流 高HFE 优秀HFE线性 与2SA1618互补 |
