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2SC4915-y NPN Transistors(BJT) 40V 20mA 550MHz 40~200 <200mV/0.2V SOT-523/SSM marking QY high frequency amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 40V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 30V |
集电极连续输出电流IC Collector Current(IC) | 20mA |
截止频率fT Transtion Frequency(fT) | 550MHz |
直流电流增益hFE DC Current Gain(hFE) | 40~200 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | <200mV/0.2V |
耗散功率Pc Power Dissipation | 100mW/0.1W |
Description & Applications | Features • NPN Epitaxial Planar Silicon Transistor • High Frequency Amplifier Applications FM, RF, MIX, If Amplifier Applications • Small reverse transfer capacitance: Cre = 0.55 pF (typ.) • Low noise figure: NF = 2.3dB (typ.) |
描述与应用 | 特点 •NPN平面外延硅晶体管 •高频率放大器应用FM,RF,MIX,如果放大器的应用 •小反向传输电容:CRE= 0.55 PF(典型值) •低噪声系数:NF=2.3分贝(典型值) |