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2sc4926YD-02TL NPN Transistors(BJT) 15V 50mA 11GHz 50~250 SOT-143/MPAK-4 marking YD VHF/UHF wide band amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 8V |
集电极连续输出电流IC Collector Current(IC) | 50mA |
截止频率fT Transtion Frequency(fT) | 11GHz |
直流电流增益hFE DC Current Gain(hFE) | 50~250 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | |
耗散功率Pc Power Dissipation | 150mW/0.15W |
Description & Applications | Silicon NPN Epitaxial Features •High gain bandwidth product fT = 11 GHz Typ •High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application •VHF / UHF wide band amplifier |
描述与应用 | NPN硅外延 特点 •高增益带宽乘积fT=11 GHz的典型 •高增益,低噪声系数,PG=16.5 dB(典型值),NF= 1.1 dB(典型值)在f=900兆赫 应用 •VHF / UHF宽频带放大器 |