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2SC5209 NPN Transistors(BJT) 50V 1A 130MHz 900~1800 150mV/0.15V SOT-89 marking RJ relay drivepower supply application

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
6V
集电极连续输出电流IC
Collector Current(IC)
1A
截止频率fT
Transtion Frequency(fT)
130MHz
直流电流增益hFE
DC Current Gain(hFE)
900~1800
管压降VCE(sat)
Collector-Emitter Saturation Voltage
150mV/0.15V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & Applicationsrelay drive power supply application silicon NPN epitaxial type description 2SC5209 is a silicon NPN epitaxial type transistor. it designed with high voltage,high collector current and hig hFE features * high voltage Vceo=50V * small collector to emitter saturation voltage * high hFE hFE=600~1800 * small package for mounting application audio machine,VCR,relay drive of other electronic machine,power supply
描述与应用继电器驱动电源中的应用 NPN硅外延型 描述 2SC5209硅NPN外延型晶体管。它的设计与高电压,高集电极电流和较高HFE 特点 *高电压VCEO= 50V *小集电极到发射极饱和电压 *高HFE HFE=600〜1800 *安装包小 应用 音频机,录像机,继电器驱动等电子整机,电源
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