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2SC5337 NPN Transistors(BJT) 30V 250mA/0.25A 60~120 SOT-89 marking QR high frequencylow distortion amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流IC Collector Current(IC) | 250mA/0.25A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 60~120 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 2W |
| Description & Applications | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to UHF band, which is suitable for the CATV, tele-communication, and such. FEATURES PACKAGE DIMENSIONS • Low distortion (in millimeters) IM2 = 59 dB TYP. @VCE = 10 V, IC = 50 mA IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz • New power mini-mold package version of a 4-pin type gain-improved on the 2SC3356 |
| 描述与应用 | NPN外延硅晶体管 高频低失真放大器 说明 2SC5337是一个低失真和低噪声放大器的甚高频的高频晶体管设计 UHF频带的CATV，远程通信，例如，这是合适的。 特点包装尺寸 •低失真（毫米） IM2=59 dB典型值。 @ VCE= 10 V，IC= 50 mA时 IM3 =82 dB典型值。 @ VCE= 10 V，IC= 50 mA时 •低噪音 NF= 1.5 dB。 @ VCE= 10 V，IC =10毫安，F =1 GHz的 •新的电源小型模具包版本的4针型 获得改善2SC3356 |
