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2SC5338-T1 NPN Transistors(BJT) 25V 150mA/0.15A 6Ghz 80~160 SOT-89 marking SF high frequencylow distortion amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 25V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流IC Collector Current(IC) | 150mA/0.15A |
| 截止频率fT Transtion Frequency(fT) | 6Ghz |
| 直流电流增益hFE DC Current Gain(hFE) | 80~160 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5338 is designed for a low distortion and low noise RF amplifier with an operation on the low supply voltage (VCE = 5 V). This low distortion characteristics is suitable for the CATV, tele-communication, and such. FEATURES • High gain |S21 |*2 = 10 dB TYP., @VCE = 5 V, Ic = 50 mA, f = 1 GHz • Low distortion and low voltage IM2 = −55 dB TYP., IM3 = −76 dB TYP. @VCE = 5 V, Ic = 50 mA, Vin = 105 dB µV/75 Ω • New power mini-mold package version of a 4-pin type gain-improved on the 2SC4703 |
| 描述与应用 | NPN外延硅晶体管 高频低失真放大器 说明 2SC5338是专为低失真和低噪声射频放大器与低电源上的操作 电压（VCE= 5 V）。这种低的失真特性，适用于CATV，远程通信，例如。 特点 •高增益| S21| *2 =10 dB，@ VCE= 5 V，IC =50 mA时，F =1 GHz的 •低失真和低电压 IM2= -55 dB，IM3=-76 dB典型值。 @ VCE= 5 V，IC =50 mA时，VIN =105分贝μV/75Ω •新的电源小型模具包版本的4引脚型 增益改善2SC4703 |
