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2SC5345S NPN Transistors(BJT) 30V 20mA 550MHz 70~140 <300mV/0.3V SOT-23/SC-59 marking ZO RF amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流IC Collector Current(IC) | 20mA |
| 截止频率fT Transtion Frequency(fT) | 550MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 70~140 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | <300mV/0.3V |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | NPN SILICON TRANSISTOR Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response |
| 描述与应用 | NPN硅晶体管 描述 •RF放大器 特点 •高电流转换频率 FT =550MHz的，VCE=6V，IE=1毫安] •低输出电容： COB=1.4pF[VCB =6V，IE = 0] 基数较低的时间常数和高增益 •优异的噪声响应 |
