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2SC5376F-B NPN Transistors(BJT) 15V 400mA/0.4A 130MHz 500~1000 15mV SOT-523/ESM marking FB radio general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流IC Collector Current(IC) | 400mA/0.4A |
| 截止频率fT Transtion Frequency(fT) | 130MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 500~1000 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 15mV |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | transistor SILICON NPN EPITAXIAL TYPE Audio Frequency General Purpose Amplifier Applications Muting and Switching Applications • Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • High Collector Current: IC = 400 mA (max) |
| 描述与应用 | 晶体管NPN硅外延型 音频通用放大器应用 静音和开关应用 •低集电极饱和电压VCE（SAT）（1） =15毫伏 @ IC=10毫安/ IB= 0.5毫安 •高集电极电流IC= 400 mA（最大） |
