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2SC5437 NPN Transistors(BJT) 9.0V 100mA/0.1A 5GHz 80~110 SOT-523 marking TS high frequency low noise amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
9.0V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
6V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
5GHz
直流电流增益hFE
DC Current Gain(hFE)
80~110
管压降VCE(sat)
Collector-Emitter Saturation Voltage
 
耗散功率Pc
Power Dissipation
125mW/0.125W
Description & Applications NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5195
描述与应用 NPN外延硅晶体管 高频低噪声放大 特写 超超超小型模具薄型扁平封装 (1.4毫米×0.8毫米×0.59毫米:TYP。) •包含同一个芯片2SC5195
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