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2SC5615 NPN Transistors(BJT) 20V 65mA 7GHz 80~145 sot-923 marking CO high frequency low noise

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
10V
集电极连续输出电流IC
Collector Current(IC)
65mA
截止频率fT
Transtion Frequency(fT)
7GHz
直流电流增益hFE
DC Current Gain(hFE)
80~145
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
140mW/0.14W
Description & ApplicationsNPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed (1.0 × 0.5 × 0.5 mm) • NF = 1.4 dB TYP |S21e|*2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
描述与应用NPN硅RF晶体管 高频低噪声 3引脚引线迷你模具 特点 •1005封装(1.0×0.5×0.5毫米) •NF= 1.4 dB| S21E| *2  @ VCE= 3 V,IC= 7毫安=12.0 dB,F=1 GHz的
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