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2SC5625 NPN Transistors(BJT) 300V 100mA/0.1A 40MHz 60~305 <500mV/0.5V SOT-23/SC-59 marking UW low-frequency amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 300V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 300V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 40MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 60~305 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | <500mV/0.5V |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | LOW FREQUENCY amplify APPLICATION SILICON NPN EPITAXIAL TYPE(mini type) DESCRIPTION 2SC5625 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. FEATUREs ●Small collector to emitter saturation voltage. VCE(sat)=0.5V max ●Super mini package for easy mounting APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify application. |
| 描述与应用 | 低频放大应用 硅NPN外延型（迷你型） 说明 2SC5625是一个超小型封装树脂密封 硅NPN外延晶体管， 它是专为低频电压应用。 特点 ●小集电极到发射极饱和电压。 VCE（星期六）=0.5V最大 ●超小型封装，便于安装 应用 对于混合集成电路，小型机低频电压 放大应用程序。 |
