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2SC5618 NPN Transistors(BJT) 5V 30mA 14GHz 70~130 sot-923 marking W2 high frequency low noise
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 5V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 3V |
集电极连续输出电流IC Collector Current(IC) | 30mA |
截止频率fT Transtion Frequency(fT) | 14GHz |
直流电流增益hFE DC Current Gain(hFE) | 70~130 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | |
耗散功率Pc Power Dissipation | 90mW |
Description & Applications | NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • 3-pin lead-less minimold package |
描述与应用 | NPN硅RF晶体管 高频低噪声 3引脚引线迷你型 特点 •NF= 1.5 dB。@ VCE= 1 V,IC =3毫安,F =2吉赫 •NF= 1.4 dB。@ VCE= 2 V,IC =3毫安,F =2吉赫 •3引脚引线迷你型包装 |