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2SC5702ZS-01ATR NPN Transistors(BJT) 15V 50mA 8Ghz 80~160 SOT-623/MFPAK marking ZS high-frequency amplifier/oscillator
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 6V |
集电极连续输出电流IC Collector Current(IC) | 50mA |
截止频率fT Transtion Frequency(fT) | 8Ghz |
直流电流增益hFE DC Current Gain(hFE) | 80~160 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | |
耗散功率Pc Power Dissipation | 80mW |
Description & Applications | Silicon NPN Epitaxial High Frequency Amplifier / Oscillator Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz |
描述与应用 | NPN硅外延 高频放大器/振荡器 特点 •高增益带宽积 FT =8 GHz的典型。 •高功率增益和低噪声系数; PG=13 dB,NF= 1.05 dB。在f =900 MHz的 |