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2SC5706 NPN Transistors(BJT) 80V 5A 400MHz 200~560 90mV TO-252/DPAK marking C5706 high current switch DC-DCswitch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 5A |
| 截止频率fT Transtion Frequency(fT) | 400MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~560 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 90mV |
| 耗散功率Pc Power Dissipation | 800mW/0.8W |
| Description & Applications | NPN Epitaxial Planar Silicon Transistors High Current Switching Applications Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. Features • Adoption of FBET, MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. |
| 描述与应用 | NPN平面外延硅晶体管 高电流开关应用 应用 •DC-DC转换器，继电器驱动器，灯驱动器， 电机驱动器，闪光灯。 特点 •通过FBET，MBIT过程。 •大电流容量。 •低集电极 - 发射极饱和电压。 •高速开关。 •高允许功耗。 |
