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2SC6061 NPN Transistors(BJT) 180V 1A 120~300 140mV/0.14V SOT-23/SC-59 marking WN fast switch DC/DCswitch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
180V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
120V
集电极连续输出电流IC
Collector Current(IC)
1A
截止频率fT
Transtion Frequency(fT)
直流电流增益hFE
DC Current Gain(hFE)
120~300
管压降VCE(sat)
Collector-Emitter Saturation Voltage
140mV/0.14V
耗散功率Pc
Power Dissipation
1W
Description & ApplicationsTransistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications ・High-DC current gain: hFE = 120 to 300 (IC = 0.1 A) ・Low-collector-emitter saturation: VCE (sat) = 0.14 V (max) ・High-speed switching: tf = 0.2 μs (typ)
描述与应用晶体管的硅NPN外延型 高速开关应用 DC-DC转换器应用 ·高直流电流增益:HFE=120〜300(IC= 0.1 A) ·低集电极 - 发射极饱和:VCE(饱和)= 0.14 V(最大值) ·高速开关:TF=0.2微秒
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