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2SD1484K NPN Transistors(BJT) 50V 500mA/0.5A 250MHz 120~270 400mV/0.4V SOT-23/SC-59/SMT3 marking YQ medium power
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
截止频率fT Transtion Frequency(fT) | 250MHz |
直流电流增益hFE DC Current Gain(hFE) | 120~270 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 400mV/0.4V |
耗散功率Pc Power Dissipation | 2W |
Description & Applications | medium power transistor feature * high current.(Ic=5A) *low saturation voltage. typically VCE(sat)=0.1V at Ic/Ib=150mA/15mA |
描述与应用 | 中等功率晶体管 特点 *高电流(IC=5A)。 *低饱和电压。通常VCE(饱和)= 0.1V |