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2SD1757K NPN Transistors(BJT) 30V 500mA/0.5A 120MHz 120~270 100mV/0.1V SOT-23/SC-59/SMT3 marking AAQ power
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
30V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
15V |
集电极连续输出电流IC Collector Current(IC) |
500mA/0.5A |
截止频率fT Transtion Frequency(fT) |
120MHz |
直流电流增益hFE DC Current Gain(hFE) |
120~270 |
管压降VCE(sat) Collector-Emitter Saturation Voltage |
100mV/0.1V |
耗散功率Pc Power Dissipation |
200mW/0.2W |
Description & Applications | Power Transistor (15V, 0.5A) Features * Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA) * Optimal for muting. |
描述与应用 | 功率晶体管(15V,0.5A) 特点 *低VCE(SAT)。 (IC / IB=10/1mA Typ.8mV) *最优静音。 |