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2SD1760 NPN Transistors(BJT) 60V 3A 90MHz 120~270 500mV/0.5V TO-252/CPT3 marking D1760Q
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 3A |
截止频率fT Transtion Frequency(fT) | 90MHz |
直流电流增益hFE DC Current Gain(hFE) | 120~270 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc Power Dissipation | 1W |
Description & Applications | features * Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) structure Epitaxial planar type NPN silicon transistor |
描述与应用 | 特点 *低VCE(SAT)。 VCE(饱和)= 0.5V (IC / IB=2A/0.2A) 结构 外延平面型 NPN硅晶体管 |