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2SD1767 NPN Transistors(BJT) 80V 700mA/0.7A 120MHz 180~390 200mV/0.2V SOT-89/SC-62/MPT3 marking DCR
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
80V |
| 集电极连续输出电流IC Collector Current(IC) |
700mA/0.7A |
| 截止频率fT Transtion Frequency(fT) |
120MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
180~390 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
200mV/0.2V |
| 耗散功率Pc Power Dissipation |
500mW/0.5W |
| Description & Applications | Features Medium Power Transistor (-80V, -0.7A) *high breakdown voltage |
| 描述与应用 | 特点 中等功率晶体管（-80V，-0.7A） 高击穿电压 |
