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2SD1899-Z-E1 NPN Transistors(BJT) 60V 3A 120MHz 100~400 140mV/0.14V TO-252/DPAK marking radio amplifier switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 60V |
| 集电极连续输出电流IC Collector Current(IC) | 3A |
| 截止频率fT Transtion Frequency(fT) | 120MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 140mV/0.14V |
| 耗散功率Pc Power Dissipation | 2W |
| Description & Applications | NPN Silicon Epitaxial Transistor 2SD1899-Z is designed for Audio frequency amplifier and switching ,especially in hybird integrated circuits features *high Hfe Hfe=100 to 400 *low Vce Vce=0.3V |
| 描述与应用 | NPN硅外延晶体管 2SD1899-Z是专为音频放大器和开关，尤其是在混合集成电路 特点 *高HFE HFE=100至400 *低Vce VCE= 0.3V |
