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2SD2098 NPN Transistors(BJT) 50V 5A 150MHz 270~560 250mV/0.25V SOT-89/SC-62/MPT3 marking DJS

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
20V
集电极连续输出电流IC
Collector Current(IC)
5A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
120~270
管压降VCE(sat)
Collector-Emitter Saturation Voltage
250mV/0.25V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & Applications features *Low VCE(饱和). VCE(饱和) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) * Excellent DC current gain characteristics. structure Epitaxial planar type NPN silicon transistor
描述与应用 特点 *低VCE(饱和)。 VCE(饱和)= 0.25V (IC / IB= 4A/0.1A) *优异的DC电流增益特性。 ?结构 外延平面型 NPN硅晶体管
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