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2SD2199R-TSD-DR NPN Transistors(BJT) 60V 7A 10MHz 100~200 400mV/0.4V SMP-FD marking D2199 switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 7A |
| 截止频率fT Transtion Frequency(fT) | 10MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率Pc Power Dissipation | 1.65W |
| Description & Applications | *PNP/NPN Epitaxial Planar Silicon Transistor *50V/7A switching applications *NPN Epitaxial planar silicon transistors *surface mount type device making the following possible *low collector to emitter saturation voltage *highly resistant to breakdown because of wide ASO |
| 描述与应用 | *PNP/ NPN平面外延硅晶体管 *50V/7A开关应用 *以下可能的NPN外延平面硅晶体管 *表面贴装型器件 *集电极到发射极饱和电压低 *具有很高的耐击穿，因为宽ASO |
