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2SD2199R-TSD-DR NPN Transistors(BJT) 60V 7A 10MHz 100~200 400mV/0.4V SMP-FD marking D2199 switch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
7A
截止频率fT
Transtion Frequency(fT)
10MHz
直流电流增益hFE
DC Current Gain(hFE)
100~200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
400mV/0.4V
耗散功率Pc
Power Dissipation
1.65W
Description & Applications*PNP/NPN Epitaxial Planar Silicon Transistor *50V/7A switching applications *NPN Epitaxial planar silicon transistors *surface mount type device making the following possible *low collector to emitter saturation voltage *highly resistant to breakdown because of wide ASO
描述与应用*PNP/ NPN平面外延硅晶体管 *50V/7A开关应用 *以下可能的NPN外延平面硅晶体管 *表面贴装型器件 *集电极到发射极饱和电压低 *具有很高的耐击穿,因为宽ASO
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