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2SD2216-Q NPN Transistors(BJT) 60V 100mA/0.1A 150MHz 160 ~ 260 100mV/0.1V SOT-523/SC-75 marking YQ general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
160 ~ 260
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
125mW/0.125W
Description & ApplicationsSilicon NPN epitaxial planer type For general amplification Complementary to 2SB1462 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat)
描述与应用NPN硅外延平面型 对于一般的放大 互补2SB1462 特点 高FOWARD电流传输比HFE。 低集电极到发射极饱和电压VCE(SAT)
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