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2SD2226K NPN Transistors(BJT) 60V 200mA/0.2A 250MHz 820~1800 300mV/0.3V SOT-23/SC-59/SMT3 marking BJV

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
200mA/0.2A
截止频率fT
Transtion Frequency(fT)
250MHz
直流电流增益hFE
DC Current Gain(hFE)
820~1800
管压降VCE(sat)
Collector-Emitter Saturation Voltage
300mV/0.3V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & Applications General Purpose Transistor (50V, 0.15A) Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)
描述与应用 通用晶体管(50V,0.15A) 特点 1)高DC电流增益。 2)高发射基地电压。 (VCBO12V) 3)低饱和电压。 (典型值VCE(sat)=0.3V IC / IB=50mA/5mA)
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