2SD2240J-S NPN Transistors(BJT) 150V 50mA 150MHz 185~330 1V SOT-523/SC-75 marking PS high breakdown voltagelow noise amplifier|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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2SD2240J-S NPN Transistors(BJT) 150V 50mA 150MHz 185~330 1V SOT-523/SC-75 marking PS high breakdown voltagelow noise amplifier

Model：2SD2240J-S
Mark / screen / code / typing：PS
Manufacturer：
Date Code：06+NOPB 05+NOPB
Package：SOT-523/SC-75
Standard Package：3000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	150V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	150V
集电极连续输出电流IC Collector Current(IC)	50mA
截止频率fT Transtion Frequency(fT)	150MHz
直流电流增益hFE DC Current Gain(hFE)	185~330
管压降VCE（sat） Collector-Emitter Saturation Voltage	1V
耗散功率Pc Power Dissipation	125mW/0.125W
Description & Applications	Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SB1463J Features • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV
描述与应用	NPN硅外延平面型对于高击穿电压低噪声放大互补2SB1463J的特点 •高集电极 - 发射极电压（基本打开）VCEO •低噪声电压NV

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