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2SD2318 NPN Transistors(BJT) 80V 3A 50MHz 560 ~1800 1V TO-252/CPT3 marking D2318U high current gain power
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 80V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 60V |
集电极连续输出电流IC Collector Current(IC) | 3A |
截止频率fT Transtion Frequency(fT) | 50MHz |
直流电流增益hFE DC Current Gain(hFE) | 560 ~1800 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 1V |
耗散功率Pc Power Dissipation | 1W |
Description & Applications | High-current gain Power Transistor(60V, 3A) Features 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) 3) Complements the 2SB1639. |
描述与应用 | 高电流增益功率晶体管(60V,3A) 特点 1)高DC电流增益。 2)低饱和电压。 (VCE(sat)的典型值= 0.5V IC / IB=2A/0.5A) 3)补充2SB1639。 |